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BD140 PNP Bipolar Transistor



BD140 is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.

Technical Features:

  • Low saturation voltage
  • Simple drive requirements
  • High safe operating area
  • For low distortion complementary designs
  • Easy to carry and handle

Technical Specifications:

  • Transistor Polarity: PNP
  • Collector−Emitter Voltage (VCEO): 80V
  • Collector−Base Voltage (VCBO): 80V
  • Continuous Collector Current (Ic): 1.5A
  • Continuous Base Current (Ib): 0.5A
  • DC Current Gain (hFE): 40-250
  • Operating Temperature Range: – 65 – 150°C
  • Power Dissipation (Pd): 12.5W
  • Thermal Resistance (OJA): 100°C/W
  • Thermal Resistance (OJC): 10°C/W

Package Includes:

  • 1 Piece-BD140 PNP Bipolar Transistor
Weight 4 g


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SKU: ERTRN006 Category: Tags: ,