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BD140 is a three layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.
Technical Features:
- Low saturation voltage
- Simple drive requirements
- High safe operating area
- For low distortion complementary designs
- Easy to carry and handle
Technical Specifications:
- Transistor Polarity: PNP
- Collector−Emitter Voltage (VCEO): 80V
- Collector−Base Voltage (VCBO): 80V
- Continuous Collector Current (Ic): 1.5A
- Continuous Base Current (Ib): 0.5A
- DC Current Gain (hFE): 40-250
- Operating Temperature Range: – 65 – 150°C
- Power Dissipation (Pd): 12.5W
- Thermal Resistance (OJA): 100°C/W
- Thermal Resistance (OJC): 10°C/W
Package Includes:
- 1 Piece-BD140 PNP Bipolar Transistor
| Weight | 4 g |
|---|
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